| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24,648 pcs
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24648 pcs | On Request | 1 | On Request | On Request | 1712+ | On Request | On Request | |
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5,565 pcs
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5565 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The ME4894-G from Matsuki is an N-Channel logic enhancement mode power field-effect transistor. It utilizes high cell density DMOS trench technology, specifically engineered to minimize on-state resistance. This MOSFET features a 30V Drain-Source Voltage.
The ME4894-G is suitable for various power management applications where efficient switching and low conduction losses are critical. Its construction is tailored for optimal performance in demanding electronic circuits.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. Further details on specific electrical characteristics and application suitability can be found in the manufacturer's documentation.
The ME4894-G is an N-Channel logic enhancement mode power field-effect transistor.
The Drain-Source Voltage for the ME4894-G is 30V.
The ME4894-G utilizes DMOS trench technology.
The ME4894-G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the ME4894-G is 1 Unlimited.