BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 2005+ | On Request | On Request |
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| Halogen Free |
The ME2N7002DKW-G is a Dual N-Channel logic enhancement mode power MOSFET manufactured by Matsuki. It utilizes high cell density DMOS trench technology for minimized on-state resistance. This MOSFET is suitable for low-voltage applications such as power management in notebook computers and battery-powered circuits where low power loss is critical.
Key electrical specifications include a drain-source breakdown voltage of 60V, a gate threshold voltage typically around 2.5V, and a maximum on-resistance of 3Ω at VGS=10V. It also offers an ESD protection rating of over 2KV HBM. The device is housed in a compact SOT-363 surface-mount package.
Applications for the ME2N7002DKW-G include power management in notebooks, DC/DC converters, load switches, and LCD display inverters. Its design prioritizes low on-resistance and high current capability within a small outline surface mount package.
The maximum drain-source voltage (VDS) is 60V.
The typical gate threshold voltage (VGS(th)) is 2.5V.
The maximum drain-source on-resistance (RDS(ON)) at VGS=10V is 3Ω.
The device is supplied in a SOT-363 package.
The operating junction temperature ranges from -55°C to 150°C.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
