ME2301-G The Matsuki ME2301-G is a P-Channel logic enhancement mode power field effect transistor. It is produced using high cell density, DMOS trench technology.
Mfr Part #:

ME2301-G

Available from 1 distributors
Mfr Name: MQTSUKI
MQTSUKI
The Matsuki ME2301-G is a P-Channel logic enhancement mode power field effect transistor. It is produced using high cell density, DMOS trench technology.
✓ Total Stock: 10,100 pcs

ME2301-G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,100 pcs
10100 pcs On Request 1 On Request On Request 2016+ On Request On Request

ME2301-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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ME2301-G Description

Short technical summary and product information.

The ME2301-G from Matsuki is a P-Channel logic enhancement mode power field effect transistor. It utilizes high cell density DMOS trench technology, a process specifically designed to minimize on-state resistance. This transistor is suitable for various electronic applications requiring efficient power switching.

 

Key specifications include RoHS3 compliance, an MSL rating of 1 Unlimited, and REACH Unaffected status. These attributes indicate adherence to environmental and safety standards. The component is part of the broader category of discrete semiconductor products, specifically within transistors, FETs, and MOSFETs - single.

 

This MOSFET is designed for applications where reliable P-Channel switching is needed. Its construction aims for optimal performance in terms of low on-state resistance, contributing to energy efficiency in circuits. Further details on specific electrical and thermal characteristics would be available in the manufacturer's datasheet.

ME2301-G Quick Information

Product Type: MOSFET
Series: Logic Enhancement Mode
Canonical Name: ME2301-G P-Channel MOSFET
Subcategory: P-Channel

ME2301-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

ME2301-G Features

  • P-Channel logic enhancement mode MOSFET.
  • High cell density DMOS trench technology.
  • Designed to minimize on-state resistance.
  • RoHS3 Compliant.
  • MSL 1 Unlimited.

ME2301-G Applications

  • Suitable for power switching applications.
  • Ideal for circuits requiring P-Channel FETs.
  • Used in general electronic designs.
  • Component for discrete semiconductor needs.

ME2301-G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the RoHS status of the ME2301-G?

The ME2301-G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the ME2301-G?

The MSL for the ME2301-G is 1 Unlimited.

What is the REACH status of the ME2301-G?

The ME2301-G is REACH Unaffected.

What type of MOSFET is the ME2301-G?

The ME2301-G is a P-Channel logic enhancement mode power field effect transistor.

What technology is used in the ME2301-G MOSFET?

The ME2301-G uses high cell density, DMOS trench technology.

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