| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MDV1522 from Magnachip Semiconductor is a MOSFET designed for various electronic applications. It features a drain source breakdown voltage of 30V and a wide gate source voltage range of -20V to 20V. The continuous drain current capability spans from 16A to 59.2A, with a low drain source on-resistance between 4.3mΩ and 6.8mΩ.
This component is suitable for surface mount applications. The gate source threshold voltage ranges from 1.3V to 2.7V, indicating its switching characteristics. Its specifications make it a versatile choice for power management and switching circuits where efficiency and performance are critical.
Key electrical parameters include a maximum drain source breakdown voltage of 30V and a maximum continuous drain current of 59.2A. The low on-resistance minimizes power loss during operation. The surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain source breakdown voltage is 30V.
The continuous drain current ranges from 16A to 59.2A.
The drain source on-resistance is between 4.3mΩ and 6.8mΩ.
The gate source threshold voltage is between 1.3V and 2.7V.
The MDV1522 MOSFET is in a surface mount package.