DistyParts Icon
MDS500L The Microsemi MDS500L is a high-power NPN RF bipolar transistor designed for MODE-S ELM systems. It offers 500W output power at 1030 MHz.
Mfr Part #:

MDS500L

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The Microsemi MDS500L is a high-power NPN RF bipolar transistor designed for MODE-S ELM systems. It offers 500W output power at 1030 MHz.
✓ Total Stock: 4 pcs
$ Price Range: $0.99

MDS500L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
4 pcs
On Request
4 pcs On Request 1 On Request On Request 1101 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MDS500L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Operating Temperature
Power
Power Input
Storage Temperature
Supplier Device Package
Thermal Resistance
Transistor Type
Voltage
View Similar Products (0)

MDS500L Description

Short technical summary and product information.

The MDS500L from Microsemi Corporation is a high-power common base bipolar transistor specifically engineered for MODE-S ELM systems operating in the 1030 MHz frequency band. This NPN transistor delivers a significant 500 Watts of output power with a typical input power of 70 Watts and a power gain of 8.5 dB. It features gold thin-film metallization and diffused ballasting for enhanced reliability and a high MTTF.

 

Designed for broadband performance, the MDS500L includes input prematch circuitry. Its electrical characteristics include a collector-emitter voltage rating of 70V and a peak collector current of 25A. The transistor is housed in a 55ST package suitable for chassis mounting.

 

Key specifications include a collector efficiency of 50% at 1030 MHz and 50V Vcc. It also offers load mismatch tolerance up to 3:1 VSWR and a pulse droop of 0.8 dB. The operating junction temperature can reach up to 200°C, and it has a thermal resistance of 0.21°C/W.

MDS500L Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: MDS500L RF Bipolar Transistor
Subcategory: RF

MDS500L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MDS500L Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MDS500L Features

  • High power NPN RF bipolar transistor.
  • 500W output power at 1030 MHz.
  • 70V collector-emitter voltage rating.
  • 8.5dB typical power gain.
  • Chassis mount 55ST package.

MDS500L Applications

  • Designed for MODE-S ELM systems.
  • Suitable for 1030 MHz frequency band.
  • Broadband performance applications.
  • High power RF applications.

MDS500L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the output power of the MDS500L transistor?

The MDS500L transistor provides 500W of power output.

What is the typical power gain for the MDS500L?

The typical power gain for the MDS500L is 8.5dB.

What is the operating frequency range for the MDS500L?

The MDS500L operates in the frequency range of 1.03GHz to 1.09GHz.

What is the collector-emitter voltage rating of the MDS500L?

The collector-emitter voltage rating for the MDS500L is 70V.

What type of transistor is the MDS500L?

The MDS500L is an NPN bipolar transistor.

How is the MDS500L transistor mounted?

The MDS500L transistor is chassis mounted.

What is the maximum operating junction temperature for the MDS500L?

The maximum operating junction temperature for the MDS500L is 200°C.

Home
Account

Categories