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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The MDP5N50 is an N-Channel MOSFET manufactured by NA, utilizing advanced MOSFET technology. It is designed for applications requiring high switching performance and excellent quality, such as SMPS and HID systems.
Key electrical specifications include a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 5.0A. The on-resistance (RDS(ON)) is rated at a maximum of 1.4Ω when the gate-source voltage (VGS) is 10V. This MOSFET is suitable for general-purpose applications.
The MDP5N50 is manufactured using advanced MagnaChip's MOSFET Technology. It is designed to provide low on-state resistance and high switching performance, ensuring excellent quality for various electronic designs. The device is suitable for SMPS, HID, and general-purpose applications, making it a versatile component for power management solutions.
The drain-source voltage (VDS) of the MDP5N50 is 500V.
The continuous drain current (ID) for the MDP5N50 is 5.0A.
The maximum on-resistance (RDS(ON)) of the MDP5N50 is 1.4Ω at a gate-source voltage of 10V.
The MDP5N50 is suitable for SMPS, HID, and general purpose applications.