| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The MDP5N50 is an N-Channel MOSFET manufactured by MAGNACHIP SEMICONDUCTOR. It utilizes advanced MOSFET technology to provide low on-state resistance, high switching performance, and excellent quality.
Key electrical specifications include a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 5.0A. The on-resistance (RDS(ON)) is rated at a maximum of 1.4Ω when the gate-source voltage (VGS) is 10V.
This MOSFET is suitable for applications such as Switched-Mode Power Supplies (SMPS), High-Intensity Discharge (HID) lighting, and general-purpose switching applications. Its design focuses on efficiency and reliability in demanding electronic circuits.
The drain-source voltage (VDS) for the MDP5N50 is 500V.
The continuous drain current (ID) for the MDP5N50 is 5.0A.
The maximum on-resistance (RDS(ON)) for the MDP5N50 is 1.4Ω at a gate-source voltage of 10V.
The MDP5N50 is suitable for SMPS, HID, and general-purpose applications.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.