| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,612 pcs
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4612 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation |
The MDF7N50TH from MAGNACHIP SEMICONDUCTOR is an N-Channel MOSFET utilizing advanced technology for low on-state resistance and high switching performance. It is rated for a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 7.0A at a case temperature of 25°C.
Key electrical characteristics include a maximum on-state resistance (Rds(on)) of 0.9Ω at a gate-source voltage (Vgs) of 10V. The device also features a gate threshold voltage (Vgs(th)) between 3.0V and 5.0V. Its thermal resistance from junction to case is 3.5°C/W.
This MOSFET is suitable for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching circuits, and general-purpose applications. It comes in a TO-220F package suitable for through-hole mounting.
The operating temperature range is from -55°C to 150°C. The part is RoHS3 compliant and Halogen Free.
The maximum drain-source voltage (Vds) for the MDF7N50TH is 500V.
The continuous drain current (Id) is 7A at a case temperature of 25°C.
The typical drain-source on-resistance (Rds(on)) is 0.76Ω when measured at Vgs=10V and Id=3.5A.
The MDF7N50TH is supplied in a TO-220F package.
The junction and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.