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MDE10N026RH The Magnachip Semiconductor MDE10N026RH is a 100V N-channel MOSFET in a D2PAK surface mount package. It offers a maximum continuous drain current of 120A and a low on-resistance of 2.6 mOhm at 10V gate-source voltage.
Mfr Part #:

MDE10N026RH

Available from 1 distributors
Mfr Name: Magnachip Semiconductor
Magnachip Semiconductor
The Magnachip Semiconductor MDE10N026RH is a 100V N-channel MOSFET in a D2PAK surface mount package. It offers a maximum continuous drain current of 120A and a low on-resistance of 2.6 mOhm at 10V gate-source voltage.
✓ Total Stock: 1,312 pcs

MDE10N026RH Available from 1 distributor

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MDE10N026RH Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Gate Charge
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SVHC Present
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MDE10N026RH Description

Short technical summary and product information.

The MDE10N026RH is a power MOSFET from Magnachip Semiconductor, designed for optimized power management applications. This N-channel MOSFET features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Ids) of up to 120A at 25°C.

 

With a low on-resistance (Rds(on)) of 2.6 mOhm at a gate-source voltage (Vgs) of 10V, this component ensures efficient power transfer and minimizes conduction losses. The gate charge (Qg) is 147nC, with Qgs at 42nC and Qgd at 28nC, providing key parameters for switching performance.

 

The MDE10N026RH is housed in a D2PAK surface mount package, suitable for automated assembly processes. Its robust design and electrical characteristics make it a suitable choice for various power conversion and management circuits where high current and voltage handling are required.

MDE10N026RH Quick Information

Product Type: MOSFET
Series: MDE
Canonical Name: MAGNACHIP SEMICONDUCTOR MDE10N026RH MOSFET
Subcategory: Single MOSFET

MDE10N026RH Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MDE10N026RH Features

  • 100V drain-source voltage rating.
  • 120A maximum continuous drain current.
  • Low 2.6 mOhm on-resistance.
  • Surface mount D2PAK package.
  • Optimized for power management.

MDE10N026RH Applications

  • Suitable for power conversion circuits.
  • Used in power management applications.
  • Ideal for high current switching.
  • Designed for efficient power delivery.

MDE10N026RH FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the MDE10N026RH?

The maximum drain-source voltage (Vds) is 100V at 25°C.

What is the continuous drain current rating?

The continuous drain current (Ids) is 120A at 25°C.

What is the on-resistance of the MDE10N026RH?

The maximum on-resistance (Rds(on)) is 2.6mOhm at Vgs=10V.

What is the gate threshold voltage?

The maximum gate-source threshold voltage (Vgs(th)) is 4V.

What is the gate charge of this MOSFET?

The typical gate charge (Qg) is 147nC at 10V, with Qgs of 42nC and Qgd of 28nC.

What package is the MDE10N026RH available in?

The device is packaged in a D2PAK (TO-263) surface mount package.

Does the MDE10N026RH support surface mount mounting?

Yes, the mounting type is surface mount.

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