| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Access Time | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
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| Mounting Type | |
| Operating Temperature | |
| Output Type | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The ROHM Semiconductor MD51V65165E-50TAZ0AR is a 64Mbit DRAM memory integrated circuit. It is organized as 4M x 16 bits and utilizes a parallel interface. This component supports Fast Page Mode with EDO capabilities and read-modify-write operations.
Key electrical specifications include a 25 ns access time and a write cycle time of 84 ns. It operates from a single 3V to 3.6V power supply. The device supports various refresh modes, including RAS-only, CAS-before-RAS, and hidden refresh, requiring 4096 cycles per 64ms.
Packaged in a 50-pin TSOP (0.400", 10.16mm Width), it is designed for surface mounting. The operating temperature range is from 0°C to 70°C (TA). Input and output signals are LVTTL compatible, with outputs featuring a 3-state capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
64Mbit organized as 4M x 16.
Parallel.
3V to 3.6V, with a 3.3V nominal voltage.
25 ns.
0°C to 70°C.
50-TSOP (0.400", 10.16mm width), 44 leads, surface mount.
RAS-only, CAS-before-RAS, and hidden refresh, 4096 cycles/64ms.