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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,556 pcs
|
1556 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics MD2001FX is a single NPN bipolar junction transistor (BJT) housed in an ISOWATT-218FX package. It is designed for through-hole mounting and features a high breakdown voltage of 700V and a continuous current capability of 12A.
This transistor can dissipate up to 58W of power and operates at temperatures up to 150°C (TJ). Its DC current gain (hFE) is a minimum of 4.5 at 6A and 5V, with a Vce saturation of 1.8V maximum at 1.5A and 6A.
The MD2001FX is specified as RoHS3 compliant, has an MSL of 1, and is REACH unaffected. These compliance details, however, are unverified and should be confirmed.
This component is suitable for various power switching and amplification applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 700 V.
The maximum continuous current is 12 A.
The power dissipation is 58 W.
The operating temperature is 150°C (TJ).
The MD2001FX is available in the ISOWATT-218FX package.
The MD2001FX transistor is mounted using the Through Hole method.