| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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116 pcs
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116 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MCT62 by NXP Semiconductors is a dual phototransistor optocoupler designed for applications requiring isolation between circuits. Each channel consists of an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Key electrical characteristics include a continuous forward current of 60 mA and a continuous collector current of 30 mA. The device has a total power dissipation of 400 mW at 25°C, with a derating of 5.33 mW/°C above that temperature. The detector power dissipation is rated at 150 mW at 25°C, with a derating of 2.0 mW/°C.
This optocoupler is suitable for applications such as isolating high-voltage transients in AC line/digital logic interfaces, eliminating spurious grounds in digital logic systems, and providing feedback control in high-frequency power supplies. It is housed in a 16-lead DIP package and is designed for through-hole mounting.
The operating temperature range is -55°C to +100°C, and the storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55 to +100 °C.
16-Lead DIP.
60 mA continuous, 3 A peak.
400 mW at 25°C, derated 5.33 mW/°C above 25°C.
30 mA continuous.
3 V maximum.