| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,692 pcs
|
30692 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The MCP87055T-U/LC is a N-channel MOSFET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 25V and a continuous drain current of 60A. The device is packaged in an 8-pin PDFN package, designed for surface mounting on printed circuit boards. It is suitable for power switching, load control, and other high-current applications where low on-resistance and efficient switching are required.
The MOSFET's electrical characteristics include a maximum drain-to-source on resistance of 6 milliohms at VGS = 4.5V and 20A, and 4.7 milliohms at VGS = 10V and 20A. The total gate charge is 14 nanocoulombs at VDS = 12.5V, ID = 20A, VGS = 4.5V. The device has a series gate resistance of 2.1 ohms and input capacitance of 890 picofarads, making it suitable for high-speed switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 25V.
The maximum continuous drain current is 60A.
It is packaged in an 8-pin PDFN package.