| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26,814 pcs
|
26814 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
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The MCP14E6T-E/SN from Microchip Technology is a dual high-speed power MOSFET driver designed for demanding applications. It delivers a peak output current of 2.0A, making it suitable for driving MOSFETs and IGBTs efficiently.
This driver operates over a wide input supply voltage range of 4.5V to 18V, offering flexibility in power system design. Key electrical characteristics include fast rise and fall times of 12 ns and 15 ns respectively (with a 1000 pF load), and a typical propagation delay of 45 ns, enabling high switching frequency operation.
The device features independent enable functions for each driver output, providing enhanced control. It is available in a space-saving 8-SOIC package, suitable for surface mount applications. The operating temperature range is -40°C to 150°C (TJ).
Applications for the MCP14E6T-E/SN include switch mode power supplies, pulse transformer drive, line drivers, and motor and solenoid drive.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MCP14E6T-E/SN has a typical peak output current of 2.0A.
The input supply voltage range for the MCP14E6T-E/SN is 4.5V to 18V.
The operating temperature range for the MCP14E6T-E/SN is -40°C to +150°C (TJ).
The MCP14E6T-E/SN is supplied in an 8-SOIC package.
The typical rise time is 12 ns and the typical fall time is 15 ns, both with a 1000 pF load.
The MCP14E6T-E/SN has 2 independent drivers.
The MCP14E6T-E/SN can drive IGBT, N-Channel, and P-Channel MOSFET gates.