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26,790 pcs
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26790 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
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The Microchip Technology MCP14E11-E/P is a dual high-speed power MOSFET driver designed for applications requiring significant current drive capability. It can deliver up to 3.0A of peak output current, making it suitable for driving MOSFETs and IGBTs in switch mode power supplies, motor drives, and pulse transformer applications.
This device operates from a wide input supply voltage range of 4.5V to 18V. It features independent enable functions for each driver output, providing flexible control. The MCP14E11-E/P offers fast switching characteristics with typical rise and fall times of 25ns and delay times of 45ns. It is designed to handle capacitive loads up to 1800 pF.
The MCP14E11-E/P is available in a space-saving 8-pin PDIP package suitable for through-hole mounting. It is rated for an operating temperature range of -40°C to 150°C (TJ). The driver is latch-up protected and designed to withstand negative voltage swings on logic inputs.
Key electrical characteristics include low shoot-through current and matched rise/fall times. The independent enable pins are active-high and internally pulled up to VDD, allowing them to be left floating for standard operation. This driver is ideal for high switching frequency applications where precise control and high current delivery are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MCP14E11-E/P operates from 4.5V to 18V.
The MCP14E11-E/P is available in an 8-DIP (0.300", 7.62mm) through-hole package.
It operates from -40°C to 150°C junction temperature.
Peak output current is 3.0A typical.
It has two independent driver channels.
Rise time is 14ns and fall time is 17ns with a 1800pF load.
Yes, it supports IGBT, N-channel, and P-channel MOSFET gates.