| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
144,000 pcs
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144000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The MCH6661-TL-W is a dual N-channel MOSFET array manufactured by ON Semiconductor. This component is designed for surface mount applications and comes in a compact SOT-363 package.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 1.8A. The MOSFET features a logic level gate and 4V drive capability, with a gate threshold voltage (Vgs(th)) of 2.6V at 1mA. Its on-resistance (Rds On) is a maximum of 188mOhm at 900mA and 10V, with an input capacitance (Ciss) of 88pF at 10V and a gate charge (Qg) of 2nC at 10V.
This device operates within a temperature range of -150°C to 150°C (TJ). It is suitable for various electronic circuits requiring efficient switching and power management. The component is rated for 800mW of power dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 1.8A.
The operating temperature range is 150°C (TJ).
It is supplied in a 6-TSSOP, SC-88, SOT-363 package.
Yes, it features a logic level gate and 4V drive capability.