| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,935 pcs
|
1935 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (DC) | |
| Drain To Source Breakdown Voltage (@ ID=--1 mA, VGS=0 V) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Voltage | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| On Resistance (Maximum @ ID=0.5 A, VGS=2.5 V) | |
| Operating Temperature | |
| Packing Type | |
| Pb-Free | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology |
The MCH6660-TL-H from On Semiconductor is a complementary dual power MOSFET designed for general-purpose switching applications. This device integrates both N-channel and P-channel MOSFETs within a compact MCPH6 package (6-SMD, Flat Leads).
The N-channel MOSFET features a Drain-to-Source Voltage (Vdss) of 20V and can handle a continuous Drain Current (ID) of 2A. Its ON-resistance (Rds(on)) is specified as a maximum of 136mOhm at 1A and 4.5V Gate-to-Source Voltage (Vgs). The P-channel MOSFET offers a Drain-to-Source Voltage (Vdss) of -20V and a continuous Drain Current (ID) of -1.5A.
Key electrical characteristics include a Gate-to-Source Voltage (Vgs) range of ±10V, a maximum power dissipation of 800mW, and an input capacitance (Ciss) of 128pF at 10V. The device operates at a junction temperature up to 150°C and is suitable for surface mounting.
This MOSFET is Pb-Free, Halogen Free, and RoHS compliant. It is noted that this device is not recommended for new designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage (Vdss) for the N-channel MOSFET is 20V.
The maximum ON-resistance (Rds(on)) for the N-channel MOSFET is 136mOhm at 1A and 4.5V.
The MCH6660-TL-H is available in the MCPH6 package, also known as SC-88, SC-70-6, or SOT-363.
The junction temperature (TJ) for this MOSFET can reach up to 150°C.