| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,130 pcs
|
34130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The MCH6351-TL-W from ON Semiconductor is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in a 6-SMD, Flat Leads package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 12V, a continuous drain current (Id) of 9A at a case temperature of 25°C, and a maximum power dissipation of 1.5W. The on-resistance (Rds On) is rated at a maximum of 16.9mOhm at 4.5A and 4.5V gate-source voltage. Input capacitance (Ciss) is 2200 pF at 6V, and gate charge (Qg) is 20.5 nC at 4.5V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum gate-source voltage of ±10V. The drive voltage range is specified from 1.5V to 4.5V. It is suitable for various electronic designs requiring a reliable P-Channel MOSFET in a compact package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the MCH6351-TL-W is 12V.
The MCH6351-TL-W has a maximum continuous current rating of 9A.
The maximum power dissipation for the MCH6351-TL-W is 1.5W.
The MCH6351-TL-W operates at temperatures up to 150°C (TJ).
The MCH6351-TL-W is a P-Channel MOSFET.
The MCH6351-TL-W is supplied in a 6-SMD, Flat Leads package.