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99,000 pcs
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99000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MCH4017-TL-H from On Semiconductor is an NPN RF transistor suitable for high-frequency applications. It features a maximum collector-emitter voltage of 12V and a maximum collector current of 100mA. The device boasts a high gain-bandwidth product of 10GHz and a typical noise figure of 1.2dB at 1GHz, with a forward transfer gain of 17dB at 1GHz.
This transistor is packaged in a 4-MCPH (SOT-343F) surface-mount case, making it suitable for compact designs. It has a maximum power dissipation of 450mW and an operating junction temperature range of -55°C to 150°C. The MCH4017-TL-H is also noted for being halogen-free compliant.
Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 50mA and 5V. It also has low cutoff currents, with both collector and emitter cutoff currents at a maximum of 1μA. This makes it a reliable component for RF signal amplification and switching circuits where performance and low noise are critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage is 12V.
The typical gain-bandwidth product (fT) is 10GHz at 5V collector-emitter voltage and 30mA collector current.
The typical noise figure (NF) is 1.2dB at 1GHz with 5V collector-emitter voltage and 10mA collector current.
The MCH4017-TL-H is supplied in the 4-MCPH package, which corresponds to JEITA/JEDEC codes SC-82AB, SOT-343, and SC-82.
The operating junction temperature (TJ) ranges from -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant.