| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,955 pcs
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2955 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MCH4015-TL-H from On Semiconductor is an NPN RF bipolar junction transistor (BJT) designed for high-frequency applications. It features a low noise figure of 1.2dB typical at 1GHz and a high cut-off frequency (fT) of 10GHz typical at 5V and 30mA.
This transistor operates with a collector-to-emitter voltage (VCEO) of 12V and a continuous collector current (IC) of up to 100mA. It offers a DC current gain (hFE) ranging from 60 to 150 at 50mA and 5V, and a forward transfer gain (|S21e|2) of 17dB typical at 1GHz. The device is rated for a collector dissipation of 450mW and can operate at junction temperatures up to 150°C.
The MCH4015-TL-H comes in a compact 4-MCPH (SOT-343F) surface-mount package, making it suitable for space-constrained designs. It is also compliant with RoHS standards and is halogen-free.
This RF transistor is ideal for applications requiring low noise and high gain at frequencies up to 10GHz, such as in RF amplifiers and signal processing circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) is 12V.
The typical noise figure is 1.2dB at 1GHz.
The MCH4015-TL-H is supplied in a SOT-343F package.
The operating junction temperature range is -55°C to +150°C.
Yes, the MCH4015-TL-H is RoHS3 compliant.