| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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42,000 pcs
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42000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
This N-Channel MOSFET from ON Semiconductor, part number MCH3475-TL-E, is suitable for various electronic applications requiring efficient switching. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.8A at ambient temperature.
The device exhibits a low Rds On of 180mOhm at 900mA and 10V gate-source voltage, with a gate charge (Qg) of 2nC at 10V. Input capacitance (Ciss) is rated at 88pF at 10V. The MOSFET operates at a maximum junction temperature of 150°C and has a power dissipation of 800mW.
Packaged in a surface mount SC-70FL/MCPH3 configuration, this MOSFET is designed for ease of integration into compact circuit designs. Its N-channel technology and specified electrical characteristics make it a versatile component for power management and signal switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The maximum continuous drain current is 1.8A at room temperature.
It comes in a SC-70FL surface mount package.
The maximum Rds On is 180 milliohms at 900mA and 10V Vgs.
It operates up to 150°C.
The maximum gate charge is 2 nanocoulombs at 10V.