| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MCH3312-TL-E from On Semiconductor is a P-Channel Silicon MOSFET designed for ultrahigh-speed switching applications. This device offers a low ON-resistance of 188mΩ typical at a Vgs of 4V and Id of 1A, making it efficient for various switching tasks.
With a Drain-to-Source voltage rating of 30V and a continuous Drain Current of 2A, the MCH3312-TL-E is suitable for applications requiring moderate power handling. The MOSFET supports 4V drive, simplifying integration into low-voltage control systems. Its 3-pin surface mount package is designed for ease of assembly on printed circuit boards.
Key electrical characteristics include a maximum Drain-to-Source voltage of 30V and a typical ON-resistance of 188mΩ. The device is specified for ultrahigh-speed switching, indicating its suitability for fast-response circuits. The surface mount package facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 2A at 25°C.
The typical on-resistance is 188mΩ at Vgs=4V and Id=1A.
It comes in a surface mount 3-pin package.
The maximum gate-to-source voltage is ±12V.