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27,000 pcs
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27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MCH3245-TL-E from ON Semiconductor is a single NPN bipolar junction transistor (BJT) designed for various driver applications. It utilizes MBIT processes for large current capacity and high-speed switching.
Key electrical specifications include a collector-to-emitter voltage of 50V and a continuous collector current of 2A. The transistor offers a low collector-to-emitter saturation voltage (VCE(sat)) of 260mV at 1A collector current and 50mA base current, and a high DC current gain (hFE) of 200 at 100mA collector current and 2V VCE. Its gain-bandwidth product (fT) is 420MHz at 300mA collector current.
This device is housed in an ultrasmall MCPH3 package, compatible with JEITA SC-70 and JEDEC SOT-323 standards. The compact size and low mounting height of 0.85mm make it suitable for slim and small applied sets. The maximum power dissipation is 800mW when mounted on a ceramic substrate.
Applications include relay drivers, lamp drivers, and motor drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage is 50V.
The continuous collector current rating is 2A.
The maximum power dissipation is 0.8W when mounted on a ceramic substrate.
The operating junction temperature range is -55°C to +150°C.
The minimum DC current gain (hFE) is 200 at 100mA collector current and 2V VCE.
The gain-bandwidth product is 420MHz.
The package is SC-70, SOT-323.