| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MCH3145-TL-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for applications requiring a 50V collector-emitter breakdown voltage and a continuous collector current of up to 2A. This transistor offers a low collector-to-emitter saturation voltage and high-speed switching capabilities, making it suitable for various driver applications.
Key electrical characteristics include a minimum DC current gain (hFE) of 200 at 100mA and 2V, and a gain-bandwidth product (fT) of 420MHz at 300mA and 10V. The device operates at junction temperatures up to 150°C and has a maximum power dissipation of 800mW when mounted on a ceramic substrate.
The MCH3145-TL-E comes in an ultrasmall SC-70, SOT-323 package, with a mounting height of 0.85mm, allowing for compact and slim designs. It is available in tape and reel packaging, suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter voltage rating (VCEO) for the MCH3145-TL-E is -50V.
The maximum continuous collector current (IC) for the MCH3145-TL-E is 2A.
The operating junction temperature (Tj) for the MCH3145-TL-E is up to 150°C.
The MCH3145-TL-E is supplied in an SC-70, SOT-323 package.
The MCH3145-TL-E is RoHS3 Compliant.