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24,531 pcs
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24531 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MC74AC10DR2G from On Semiconductor is a high-performance silicon-gate CMOS triple 3-input NAND gate. This integrated circuit is designed for digital logic applications and offers TTL compatible inputs, making it suitable for interfacing with various logic families.
The device operates over a wide supply voltage range of 2V to 6V, with specific recommendations for ACT devices between 4.5V and 5.5V. It can source and sink up to 24mA of current. The NAND gate features a maximum propagation delay of 7ns at 5V supply and 50pF load capacitance. It is housed in a standard 14-SOIC package suitable for surface mounting.
Key electrical characteristics include a wide operating temperature range from -40°C to 85°C. The component is manufactured using silicon-gate CMOS technology, ensuring high performance and low power consumption. The 14-SOIC package has a width of 0.154 inches (3.90mm).
This logic gate is ideal for use in digital systems requiring reliable NAND logic functions. Its robust design and wide operating conditions make it a versatile component for various electronic designs.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The MC74AC10DR2G has a DC supply voltage range of 0.5 V to 6.5 V. For AC devices, the supply voltage range is 2 V to 6 V, and for ACT devices, it is 4.5 V to 5.5 V.
The MC74AC10DR2G is supplied in a 14-SOIC package, specifically a 14-SOIC (0.154", 3.90mm Width) for surface mount applications.
The operating ambient temperature range for the MC74AC10DR2G is -40 °C to 85 °C.
The maximum propagation delay for the MC74AC10DR2G is 7 ns when operating at 5V with a 50pF load.
The MC74AC10DR2G can sink or source a DC output current of up to ±50 mA. For specific high/low conditions, it can source -24 mA (high) and sink 24 mA (low).
The MC74AC10DR2G has an ESD withstand voltage of greater than 2000 V for the Human Body Model and greater than 1000 V for the Charged Device Model.