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425 pcs
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425 pcs | On Request | 1 | On Request | On Request | 117 | On Request | On Request |
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The MC74AC10DR2 from On Semiconductor is a high-performance silicon-gate CMOS triple 3-input NAND gate. This device is designed for surface mount applications and comes in a standard 14-SOIC package.
Key electrical characteristics include a wide operating voltage range from 2V to 6V, with specific operating conditions for ACT devices noted between 4.5V and 5.5V. The gate offers an output current capability of 24mA for both high and low states. Propagation delay is rated at a maximum of 7ns at 5V with a 50pF load capacitance.
The operating ambient temperature range for this component is -40°C to 85°C, with storage temperatures ranging from -65°C to 150°C. The device features ESD protection exceeding 2000V for the Human Body Model and 1000V for the Charged Device Model. Latch-up performance is rated at 100mA.
This NAND gate is suitable for various digital logic applications requiring reliable and efficient signal processing. Its robust design and standard packaging make it a versatile choice for circuit designers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MC74AC10DR2 operates with a DC supply voltage range of 2.0 V to 6.0 V. For ACT devices, the specific operating range is 4.5 V to 5.5 V.
The MC74AC10DR2 is supplied in a 14-SOIC (0.154", 3.90mm Width) package.
The MC74AC10DR2 has an operating ambient temperature range of -40°C to 85°C.
The MC74AC10DR2 is a NAND Gate.
The maximum propagation delay is 7 ns, tested at 5V with a 50pF load.
The maximum output current for low-level is 24 mA, and for high-level is -24 mA.
Yes, it has an ESD withstand voltage of > 2000 V (Human Body Model) and > 1000 V (Charged Device Model).