| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MC33GD3100A3EKR2 is an advanced single-channel gate driver designed for IGBT and SiC power devices. It integrates galvanic isolation and a low on-resistance drive stage, providing high charging and discharging currents up to 15A peak.
Key features include an SPI interface for monitoring and programmability, configurable undervoltage lockout (UVLO), and integrated current and temperature sense for fault minimization. The device supports autonomous fault management and reports status via an INTB pin and SPI. It is designed for high reliability systems, meeting ASIL C/D requirements.
This gate driver is compatible with negative gate supplies and supports current and temperature sense IGBTs. It includes soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping. The MC33GD3100A3EKR2 meets stringent automotive application requirements and is fully AEC-Q100 Grade 1 qualified.
Packaged in a 32-SOIC (32-BSSOP) surface mount configuration, it operates at 3.3V and has an operating temperature range of -40°C to 125°C (TA).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.3V.
-40°C to 125°C.
32-BSSOP (7.50mm width).
15A source and sink.
Up to 8 kV galvanic isolation.
Yes, AEC-Q100 Grade 1 qualified.
>100 V/ns.