| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,554 pcs
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1554 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MC33GD3100A3EK from NXP Semiconductors is an advanced single-channel gate driver specifically engineered for IGBT and SiC power devices. This component integrates galvanic isolation and features low on-resistance drive transistors, enabling high charging and discharging currents, low dynamic saturation voltage, and rail-to-rail gate voltage control.
Key electrical specifications include a 3.3V operating voltage, a peak output current of 15A for both source and sink, and a CMTI rating greater than 100 V/ns. It supports IGBT and N-Channel MOSFET gate types and is configured for half-bridge operation. The device also includes integrated current and temperature sensing to minimize IGBT stress during faults and provides configurable undervoltage lockout (UVLO) for protection.
Packaged in a 32-BSSOP (0.295", 7.50mm Width) on a 32-SOIC footprint, the MC33GD3100A3EK is designed for surface mounting. Its operating temperature range is -40°C to 125°C (TA). The integrated SPI interface allows for safety monitoring and programmability, making it suitable for high-reliability systems, including automotive applications.
This gate driver is built to meet stringent automotive requirements and is fully AEC-Q100 grade 1 qualified. It autonomously manages severe faults and reports status via an INTB pin and SPI interface, supporting design for high reliability systems (ASIL C/D).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.3 V.
-40°C to 125°C.
15 A.
8 kV.
Greater than 100 V/ns.
IGBT and N-Channel MOSFET.
32-SOIC (BSSOP, 0.295" width, 7.50mm).