| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MC33883DW from NXP Semiconductors is an H-bridge gate driver, also known as a full-bridge pre-driver. It features integrated charge pump and independent high and low side gate driver channels, allowing for flexible configuration. The device supports VCC operating voltages from 5.5 V up to 55 V and VCC2 from 5.5 V up to 28 V.
Key electrical characteristics include a 1.0 A peak gate driver current, enabling the driving of large gate-charge MOSFETs and utilization of high pulse-width modulation (PWM) frequencies up to 100 kHz. It incorporates under-voltage lockout (UVLO) and over-voltage lockout (OVLO) for protection. The gate driver outputs can source and sink up to 1.0 A peak current pulses.
This IC is housed in a 20-SOIC package and is designed for surface mount applications. It is qualified in compliance with AEC-Q100, making it suitable for demanding environments. The device is powered by SMARTMOS technology.
Applications for the MC33883DW include automotive systems, e-bikes, e-scooters, energy storage systems (ESS), uninterruptible power supplies (UPS), and battery junction boxes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The VCC operating voltage range is from 5.5 V up to 55 V, and the VCC2 operating voltage range is from 5.5 V up to 28 V.
The gate driver outputs can source and sink up to 1.0 A peak current pulses.
The MC33883DW includes 4 drivers.
The MC33883DW is available in a 20-SOIC package.
The operating temperature range is -40°C to 150°C (TJ).
The MC33883DW is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.