| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MC33152VDR2G is a dual, non-inverting, high-speed MOSFET driver. It is specifically designed for applications requiring low current digital signals to drive large capacitive loads with high slew rates.
This device features two independent channels, each with 1.5A totem pole outputs, making them ideally suited for driving power MOSFETs. The inputs are CMOS/LSTTL compatible with hysteresis for fast output switching. It operates over a voltage range of 6.1V to 18V with logic voltages of 0.8V and 2.6V. The operating temperature range is -40°C to 150°C (TJ).
Key electrical characteristics include output rise times of 36ns and 32ns. The MC33152VDR2G includes an undervoltage lockout with hysteresis to prevent erratic system operation at low supply voltages. It is designed for efficient high-frequency operation.
The device is available in an 8-SOIC surface mount package. It is also described as Pb-Free and Halide-Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 6.1V to 18V.
It is available in an 8-SOIC package (0.154", 3.90mm width).
The junction temperature range is -40°C to 150°C.
It has two independent drivers.
Each driver provides 1.5A peak output current.
Typical rise times are 36ns and 32ns for the two channels.
It is surface mount.