MBT3906DW1T1G The MBT3906DW1T1G is a dual PNP transistor from ON Semiconductor, designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and a 200mA continuous collector current.
Mfr Part #:

MBT3906DW1T1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MBT3906DW1T1G is a dual PNP transistor from ON Semiconductor, designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and a 200mA continuous collector current.
✓ Total Stock: 380,100 pcs
$ Price Range: $0.99

MBT3906DW1T1G Available from 8 distributors

✓ Authorised
✓ Non-Authorised

MBT3906DW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MBT3906DW1T1G Description

Short technical summary and product information.

The MBT3906DW1T1G from ON Semiconductor is a dual general-purpose PNP transistor housed in a compact SOT-363 surface mount package. This device is ideal for low-power applications where board space is limited, effectively combining two discrete transistors into a single component.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA. The DC current gain (hFE) ranges from 60 to 300 depending on the operating conditions, with a VCE(sat) of up to -0.4V at 50mA collector current. The transistor operates across a wide temperature range of -55°C to +150°C.

 

Designed for general-purpose amplifier applications, the MBT3906DW1T1G simplifies circuit design and reduces component count. It is available in a 3,000 unit tape and reel, suitable for automated surface mount assembly. The device is Pb-free and halogen-free, adhering to RoHS compliance standards.

MBT3906DW1T1G Quick Information

Product Type: Dual Transistor Array
Canonical Name: Dual PNP Transistor
Subcategory: Dual Transistor

MBT3906DW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MBT3906DW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT3906DW1T1G Features

  • Dual PNP transistor array.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Compact SOT-363 surface mount package.
  • Wide -55°C to +150°C operating temperature.

MBT3906DW1T1G Applications

  • General purpose amplifier circuits.
  • Low-power surface mount applications.
  • Designs requiring reduced board space.
  • Component count reduction in circuits.

MBT3906DW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MBT3906DW1T1G?

-40 Vdc

What is the continuous collector current rating?

-200 mAdc

What is the DC current gain (hFE) range?

60 to 300

What is the saturation voltage (Vce sat) at 5mA base and 50mA collector current?

-0.4 Vdc

What is the operating temperature range for this transistor?

-55°C to +150°C

What package type is the MBT3906DW1T1G supplied in?

SOT-363

Is the MBT3906DW1T1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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