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MBT3904DW1T3G The On Semiconductor MBT3904DW1T3G is a dual NPN bipolar junction transistor designed for general purpose amplifier applications. It comes in a compact SOT-363 package.
Mfr Part #:

MBT3904DW1T3G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MBT3904DW1T3G is a dual NPN bipolar junction transistor designed for general purpose amplifier applications. It comes in a compact SOT-363 package.
✓ Total Stock: 60,513 pcs
$ Price Range: $0.99

MBT3904DW1T3G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
60,000 pcs
On Request
60000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
513 pcs
On Request
513 pcs On Request 1 On Request On Request 18+ On Request On Request
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MBT3904DW1T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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MBT3904DW1T3G Description

Short technical summary and product information.

The MBT3904DW1T3G from ON Semiconductor is a dual general-purpose NPN transistor housed in a SOT-363 surface-mount package. This device is a spin-off of the popular SOT-23 three-leaded device, offering two discrete transistors in a single package, ideal for low-power applications where board space is limited.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V, a continuous collector current (IC) of 200mA, and a frequency of 300MHz. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10mA and 1V, with a saturation voltage (Vce(sat)) of 300mV maximum at 5mA and 50mA. The operating temperature range is -55°C to 150°C.

 

This component is designed for general purpose amplifier applications. Its dual-transistor configuration simplifies circuit design, reduces board space, and lowers component count. The device operates reliably within its specified temperature range and meets RoHS3 compliance standards.

MBT3904DW1T3G Quick Information

Product Type: Transistor
Canonical Name: On Semiconductor MBT3904DW1T3G Dual NPN Transistor
Subcategory: Array

MBT3904DW1T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MBT3904DW1T3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT3904DW1T3G Features

  • Dual NPN transistor in one package.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 300MHz operating frequency.
  • Compact SOT-363 surface mount package.

MBT3904DW1T3G Applications

  • Ideal for low-power applications.
  • Suitable for general purpose amplification.
  • Reduces board space and component count.
  • Designed for surface mount designs.

MBT3904DW1T3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MBT3904DW1T3G?

The maximum collector-emitter voltage (VCEO) for the MBT3904DW1T3G is 40 Vdc.

What is the continuous collector current rating?

The continuous collector current (IC) for the MBT3904DW1T3G is 200 mAdc.

What is the operating temperature range?

The operating temperature range for this transistor is -55°C to 150°C.

What package type is the MBT3904DW1T3G supplied in?

The MBT3904DW1T3G is supplied in a SOT-363 package.

Is the MBT3904DW1T3G RoHS compliant?

Yes, the MBT3904DW1T3G is RoHS3 compliant.

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