MBT35200MT2G The On Semiconductor MBT35200MT2G is a PNP bipolar transistor designed for surface mount applications. It features a 35V collector-emitter breakdown voltage and a maximum collector current of 2A.
Mfr Part #:

MBT35200MT2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MBT35200MT2G is a PNP bipolar transistor designed for surface mount applications. It features a 35V collector-emitter breakdown voltage and a maximum collector current of 2A.
Total Stock: 366 pcs
$ Price Range: $0.99

MBT35200MT2G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
366 pcs
366 pcs On Request 1 On Request On Request 06+ On Request On Request

MBT35200MT2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current - Collector Cutoff
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Packages
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MBT35200MT2G Description

Short technical summary and product information.

The On Semiconductor MBT35200MT2G is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, designed for surface mounting.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 35V and a maximum continuous collector current of 2A. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1.5A and 1.5V. Its Vce saturation is a maximum of 310mV at 20mA collector current and 2A collector current. The transition frequency is rated at 100MHz, indicating suitability for moderate frequency applications.

 

This component is supplied in a Tape & Reel (TR) package, facilitating automated assembly processes. The surface mount design allows for efficient integration onto printed circuit boards. Its specifications make it a viable option for switching and amplification tasks in electronic circuits where a PNP transistor is required.

MBT35200MT2G Quick Information

Product Type: Bipolar Transistor
Canonical Name: On Semiconductor MBT35200MT2G PNP Bipolar Transistor
Subcategory: Single

MBT35200MT2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MBT35200MT2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT35200MT2G Features

  • PNP bipolar transistor type.
  • 35V collector-emitter breakdown voltage.
  • 2A maximum collector current.
  • Surface mount SOT-23-6 package.
  • 100MHz transition frequency.

MBT35200MT2G Applications

  • Suitable for general switching applications.
  • Used in signal amplification circuits.
  • Ideal for compact electronic designs.
  • Facilitates automated PCB assembly.

MBT35200MT2G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the MBT35200MT2G?

The maximum collector-emitter voltage is 35V.

What package does the MBT35200MT2G come in?

It comes in a SOT-23-6 surface-mount package.

What is the maximum collector current for this transistor?

The maximum collector current is 2A.

Is the MBT35200MT2G RoHS compliant?

It is RoHS3 compliant, but this status is unverified.

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