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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
366 pcs
|
366 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Frequency - Transition | |
| Mounting Type | |
| Packages | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor MBT35200MT2G is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, designed for surface mounting.
Key electrical characteristics include a collector-emitter breakdown voltage of 35V and a maximum continuous collector current of 2A. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1.5A and 1.5V. Its Vce saturation is a maximum of 310mV at 20mA collector current and 2A collector current. The transition frequency is rated at 100MHz, indicating suitability for moderate frequency applications.
This component is supplied in a Tape & Reel (TR) package, facilitating automated assembly processes. The surface mount design allows for efficient integration onto printed circuit boards. Its specifications make it a viable option for switching and amplification tasks in electronic circuits where a PNP transistor is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 35V.
It comes in a SOT-23-6 surface-mount package.
The maximum collector current is 2A.
It is RoHS3 compliant, but this status is unverified.