| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 0637+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The On Semiconductor MBT35200MT1G is a high current PNP silicon switching transistor suitable for load management in portable applications. It is AEC-Q101 qualified and PPAP capable, with an S prefix for automotive applications. This device operates with a maximum collector-emitter voltage (VCEO) of -35Vdc and a continuous collector current (IC) of -2.0 Adc. The peak collector current (ICM) can reach -5.0 A.
Key electrical characteristics include a DC current gain (hFE) of 100 at 1.5A and 1.5V, and a Vce saturation of 310mV at 20mA and 2A. The transistor operates at frequencies up to 100MHz. Thermal performance is supported by a total device dissipation of 625 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200 °C/W (minimum pad) or 120 °C/W (1.0 x 1.0 inch pad).
The MBT35200MT1G is housed in a 6-TSOP package and is designed for surface mounting. It operates within a junction and storage temperature range of -55°C to +150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is supplied in a tape and reel package with a standard quantity of 3,000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MBT35200MT1G is -35 Vdc.
The MBT35200MT1G has a continuous collector current (IC) rating of -2.0 Adc.
The operating temperature range for the MBT35200MT1G is -55°C to +150°C.
The MBT35200MT1G is supplied in a 6-TSOP package.
Yes, the MBT35200MT1G is RoHS3 compliant.