MBT35200MT1G The On Semiconductor MBT35200MT1G is a PNP silicon switching transistor designed for load management in portable applications. It features a 35V collector-emitter voltage and 2A continuous collector current.
Mfr Part #:

MBT35200MT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MBT35200MT1G is a PNP silicon switching transistor designed for load management in portable applications. It features a 35V collector-emitter voltage and 2A continuous collector current.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

MBT35200MT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 0637+ On Request On Request

MBT35200MT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MBT35200MT1G Description

Short technical summary and product information.

The On Semiconductor MBT35200MT1G is a high current PNP silicon switching transistor suitable for load management in portable applications. It is AEC-Q101 qualified and PPAP capable, with an S prefix for automotive applications. This device operates with a maximum collector-emitter voltage (VCEO) of -35Vdc and a continuous collector current (IC) of -2.0 Adc. The peak collector current (ICM) can reach -5.0 A.

 

Key electrical characteristics include a DC current gain (hFE) of 100 at 1.5A and 1.5V, and a Vce saturation of 310mV at 20mA and 2A. The transistor operates at frequencies up to 100MHz. Thermal performance is supported by a total device dissipation of 625 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200 °C/W (minimum pad) or 120 °C/W (1.0 x 1.0 inch pad).

 

The MBT35200MT1G is housed in a 6-TSOP package and is designed for surface mounting. It operates within a junction and storage temperature range of -55°C to +150°C. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. It is supplied in a tape and reel package with a standard quantity of 3,000 units.

MBT35200MT1G Quick Information

Product Type: PNP Transistor
Canonical Name: On Semiconductor MBT35200MT1G PNP Silicon Switching Transistor
Subcategory: PNP

MBT35200MT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

MBT35200MT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT35200MT1G Features

  • PNP silicon switching transistor for load management.
  • Rated for 35V collector-emitter voltage.
  • Handles 2A continuous collector current.
  • Operates up to 100MHz frequency.
  • Surface mount 6-TSOP package.

MBT35200MT1G Applications

  • Suitable for portable applications.
  • Used for load management circuits.
  • Automotive applications supported (S Prefix).
  • General purpose switching tasks.

MBT35200MT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MBT35200MT1G?

The maximum collector-emitter voltage (VCEO) for the MBT35200MT1G is -35 Vdc.

What is the continuous collector current rating of the MBT35200MT1G?

The MBT35200MT1G has a continuous collector current (IC) rating of -2.0 Adc.

What is the operating temperature range for this PNP transistor?

The operating temperature range for the MBT35200MT1G is -55°C to +150°C.

What package type is the MBT35200MT1G supplied in?

The MBT35200MT1G is supplied in a 6-TSOP package.

Is the MBT35200MT1G RoHS compliant?

Yes, the MBT35200MT1G is RoHS3 compliant.

Home

Categories