MBT35200MT1 The On Semiconductor MBT35200MT1 is a high-current PNP silicon switching transistor designed for load management in portable applications. It features a 35V collector-emitter voltage and 2A continuous collector current.
Mfr Part #:

MBT35200MT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MBT35200MT1 is a high-current PNP silicon switching transistor designed for load management in portable applications. It features a 35V collector-emitter voltage and 2A continuous collector current.
Total Stock: 884 pcs
$ Price Range: $0.99

MBT35200MT1 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
884 pcs
884 pcs On Request 1 On Request On Request NDC On Request On Request

MBT35200MT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current - Peak
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Electrostatic Discharge
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Power
Supplier Device Package
Thermal Resistance (Junction-to-Ambient) (Maximum @ Note 2)
Thermal Resistance, Junction-to-Ambient (Maximum @ Note 1)
Thermal Resistance, Junction-to-Lead #1
Total Device Dissipation (Maximum @ Ta = 25 °C)
Total Device Dissipation (Single Pulse < 10 sec.)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MBT35200MT1 Description

Short technical summary and product information.

The On Semiconductor MBT35200MT1 is a high-current PNP silicon switching transistor suitable for load management in portable applications. This device offers a maximum collector-emitter voltage (VCEO) of -35 Vdc and a continuous collector current (IC) of -2.0 Adc.

 

Key electrical characteristics include a DC current gain (hFE) of 100 at 1.5A and 1.5V, and a saturation voltage (Vce Sat) of 310mV at 20mA and 2A. The transistor operates at a frequency of 100MHz.

 

Thermal performance is supported by a total device dissipation of 625 mW at 25°C (Note 1) and a junction-to-ambient thermal resistance of 200 °C/W (Note 1). The device operates within a junction and storage temperature range of -55 to +150 °C.

 

Packaged in a 6-TSOP surface mount case, the MBT35200MT1 is designed for efficient integration into compact electronic designs. It is AEC-Q101 qualified and RoHS compliant.

MBT35200MT1 Quick Information

Product Type: PNP Silicon Switching Transistor
Canonical Name: High Current Surface Mount PNP Silicon Switching Transistor
Subcategory: PNP

MBT35200MT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MBT35200MT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBT35200MT1 Features

  • High current PNP silicon switching transistor.
  • Rated for 35V collector-emitter voltage.
  • Supports 2A continuous collector current.
  • Operates at 100MHz transition frequency.
  • Packaged in a 6-TSOP surface mount case.

MBT35200MT1 Applications

  • Ideal for load management applications.
  • Suitable for portable electronic devices.
  • Used in power switching circuits.
  • Designed for high current switching.

MBT35200MT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MBT35200MT1?

-35 Vdc

What is the continuous collector current rating?

-2.0 Adc

What is the DC current gain (hFE) of the MBT35200MT1?

100 hFE

What is the transition frequency of this PNP transistor?

100MHz

What is the package type for the MBT35200MT1?

TSOP-6

What is the RoHS status of the MBT35200MT1?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for this component?

1 Unlimited

Home
Account

Categories