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MBRD660CTT4G The MBRD660CTT4G is a Schottky diode array rated at 60V reverse voltage and 3A forward current per diode. It features a common cathode configuration in a surface-mount DPAK package.
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MBRD660CTT4G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MBRD660CTT4G is a Schottky diode array rated at 60V reverse voltage and 3A forward current per diode. It features a common cathode configuration in a surface-mount DPAK package.
✓ Total Stock: 30,941 pcs
$ Price Range: $0.46 - $1.44

MBRD660CTT4G Available from 7 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MBRD660CTT4G Specifications Quick View

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MBRD660CTT4G Description

Short technical summary and product information.

The MBRD660CTT4G is a dual Schottky barrier rectifier designed for high-frequency switching applications. It has a peak repetitive reverse voltage of 60V and an average rectified forward current of 3A per diode (6A total) at a case temperature of 130°C. The forward voltage is typically 700mV at 3A, enabling low conduction losses.

 

These devices are optimized for use in switching power supplies, inverters, and as free-wheeling diodes. They feature extremely fast switching and platinum barrier with avalanche guard rings. The operating junction temperature range is -65°C to 175°C.

 

The part is offered in a surface-mount TO-252-3 DPAK package, which provides good thermal performance with a junction-to-case thermal resistance of 6°C/W. Lead finish is Pb-free, and the component is RoHS compliant.

MBRD660CTT4G Quick Information

Product Type: Schottky Diode Array
Series: MBRD6x0CT
Canonical Name: Schottky Rectifier Diode Array 60V 3A Common Cathode DPAK
Subcategory: Diode Arrays

MBRD660CTT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MBRD660CTT4G Estimated Pricing

Qty Low High
1+ $1.44 $1.44
10+ $0.83 $0.83
100+ $0.56 $0.56
500+ $0.46 $0.46
2,500+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBRD660CTT4G Features

  • Schottky barrier for fast switching.
  • Rated 60V reverse voltage.
  • 3A forward current per diode.
  • Common cathode configuration.
  • Surface mount DPAK package.

MBRD660CTT4G Applications

  • Used in switching power supplies.
  • Ideal for inverter circuits.
  • Suitable as free-wheeling diodes.
  • Works in high-temperature environments.

MBRD660CTT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the MBRD660CTT4G?

The maximum peak repetitive reverse voltage (VRRM) is 60 V.

What is the forward current rating?

The average rectified forward current is 3 A per diode (6 A per device) at TC = 130°C.

What is the forward voltage drop?

The forward voltage is 700 mV at 3 A.

What package is the MBRD660CTT4G available in?

It is available in a TO-252-3 DPAK surface-mount package.

What is the operating junction temperature range?

The operating junction temperature range is -65°C to 175°C.

What is the non-repetitive peak surge current rating?

The maximum non-repetitive peak surge current (IFSM) is 75 A at 60 Hz half-sine.

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