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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | 00+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Rating (Nominal @ TC = 130 °C (Rated VR) Per Device) | |
| Current Rating (Nominal @ TC = 130 °C (Rated VR, Square Wave, 20 kHz) Per Diode) | |
| Current Rating (Nominal) | |
| Diode Configuration | |
| Forward Voltage (Maximum @ IF=3 A) | |
| Forward Voltage (Maximum @ iF = 3 Amps, TC = +125 °C) | |
| Forward Voltage (Maximum @ iF = 3 Amps, TC = +25 °C) | |
| Forward Voltage (Maximum @ iF = 6 Amps, TC = +125 °C) | |
| Forward Voltage (Maximum @ iF = 6 Amps, TC = +25 °C) | |
| Lead Style | |
| Maximum Thermal Resistance (Junction to Ambient) | |
| Maximum Thermal Resistance, Junction to Case | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Reverse Leakage Current (Maximum @ 50 V) | |
| Reverse Leakage Current (Maximum @ Rated dc Voltage, TC = 125 °C) | |
| Reverse Leakage Current (Maximum @ Rated dc Voltage, TC = 25 °C) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Surge Current (Maximum @ 2 µs, 1 kHz) | |
| Surge Current (Maximum @ Surge applied at rated load conditions halfwave, single phase, 60 Hz) | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| Voltage Rate of Change | |
| Voltage Rating (Maximum) |
The MBRD650CTT4 from On Semiconductor is a Schottky barrier rectifier array designed for applications such as switching power supplies, inverters, and free-wheeling diodes. This device offers fast switching speeds and a low forward voltage drop.
Key electrical characteristics include a maximum reverse voltage of 50V and an average rectified forward current of 3A per diode at 130°C. The maximum instantaneous forward voltage is 700mV at 3A, and the reverse leakage current is 100µA at 50V.
Packaged in a surface-mount DPAK (TO-252-3) case, the MBRD650CTT4 is suitable for automated assembly processes. It operates over a wide temperature range from -65°C to 175°C, ensuring reliability in demanding environments. The device is designed for efficient thermal management with a junction-to-case thermal resistance of 6°C/W.
This component is part of the SWITCHMODE™ series and is ideal for power management circuits requiring high efficiency and fast response times.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) for the MBRD650CTT4 is 50V.
The average rectified forward current (Io) per diode is 3A.
The maximum instantaneous forward voltage (Vf) at 3A is 700mV.
The operating junction temperature range is -65°C to 175°C.
The MBRD650CTT4 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The MBRD650CTT4 is commonly used in power management applications, especially in circuits that require efficient rectification. Typical uses include power supplies, motor control, battery charging circuits, and high-efficiency rectifiers in DC-DC converters.
The MBRD650CTT4 diode requires adequate thermal management to ensure reliable operation. Effective heat dissipation can be achieved by using proper heat sinks, ensuring the device is mounted on a PCB with adequate copper area for heat spreading, and considering thermal vias for heat transfer. It is also important to follow the manufacturer's guidelines for maximum junction temperature to prevent thermal failure.