MBRB2515LT4G
On Semiconductor
The MBRB2515LT4G is a 15V, 25A Schottky power rectifier diode in a D2PAK surface mount package from On Semiconductor.
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6,400 pcs
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6400 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
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650 pcs
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650 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
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550 pcs
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550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MBRB2515LT4 is a Schottky barrier rectifier designed for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection. It features a 15V peak repetitive reverse voltage and an average rectified forward current of 25A at 90°C.
This diode utilizes Schottky Barrier technology with epitaxial construction, oxide passivation, and metal overlay contact. It has a low forward voltage drop and a guardring for stress protection. The operating junction temperature is rated up to 100°C.
The component is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It meets UL 94 V-0 flammability standards and has a thermal resistance of 1.0°C/W junction-to-case.
Key electrical characteristics include a peak repetitive forward current of 30A and a non-repetitive peak surge current of 150A. The voltage rate of change is a maximum of 10,000 V/µs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage is 15 V.
The average rectified forward current is 25 A at 90°C.
The MBRB2515LT4 is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The operating junction temperature is a maximum of 100°C.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.