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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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58,020 pcs
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58020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
111 pcs
|
111 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MBR2H200SFT1G is a surface mount Schottky power rectifier from On Semiconductor, designed for low voltage, high frequency rectification applications. It offers a 200V reverse voltage and 2A average rectified forward current.
This diode utilizes the Schottky Barrier principle, providing a low forward voltage drop and fast recovery time, making it suitable for use as free-wheeling and polarity protection diodes. Its compact SOD-123FL package is designed for optimal automated board assembly, making it ideal for portable and battery-powered products.
Key electrical characteristics include a maximum forward voltage of 940 mV at 2A and a reverse leakage current of 200 µA at 200V. The operating junction temperature range is -55°C to 150°C. The device is constructed with an epoxy, molded case and features a 100% matte tin lead finish.
Typical applications include AC-DC and DC-DC converters, reverse battery protection, and ORing of multiple supply voltages where performance and size are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the MBR2H200SFT1G is 200 V.
The average rectified forward current is 2 A.
The maximum forward voltage drop at 2A is 940 mV.
The operating junction temperature range is -55°C to 150°C.
The MBR2H200SFT1G uses a SOD-123FL package.
Yes, this device is Pb-Free.