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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Average Rectified Current | |
| Current | |
| Current - Reverse Leakage @ Vr | |
| Diode Configuration | |
| Halogen Free | |
| Industrial Grade | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The MBR10200CT-E1 is a high voltage power Schottky rectifier array manufactured by Diodes Incorporated. It consists of two Schottky diodes in a common cathode configuration, providing a total forward current of 10A (5A per diode).
With a maximum repetitive peak reverse voltage of 200V, this device is suitable for medium voltage applications. The maximum forward voltage is 0.95V at 5A, ensuring low conduction losses. The reverse leakage current is 150µA at 200V. The device features fast switching with reverse recovery time less than 500ns, making it ideal for high frequency circuits.
The Schottky technology provides low forward voltage drop and fast switching, reducing power losses in power supply output rectification and power management circuits. The guard-ring design provides stress protection for enhanced reliability.
The device is housed in a TO-220-3 through-hole package, which offers good thermal performance. The operating junction temperature is up to 150°C. The package is RoHS compliant and halogen-free, with a moisture sensitivity level of 1.
The maximum repetitive peak reverse voltage is 200V.
The average rectified current is 5A per diode, with a total of 10A for both diodes.
The maximum forward voltage is 0.95V at 5A.
The device has fast recovery with reverse recovery time less than 500ns at >200mA.
The device is available in a TO-220-3 through-hole package.
It uses Schottky technology.
The maximum operating junction temperature is 150°C.