MBD770DWT1G The On Semiconductor MBD770DWT1G is a Schottky barrier diode designed for high-speed switching applications. It features a 70V reverse voltage rating and 100mA forward current.
Mfr Part #:

MBD770DWT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MBD770DWT1G is a Schottky barrier diode designed for high-speed switching applications. It features a 70V reverse voltage rating and 100mA forward current.
✓ Total Stock: 43,060 pcs
$ Price Range: $0.99

MBD770DWT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
39,000 pcs
39000 pcs On Request 1 On Request On Request 06+30 On Request On Request
Non-Authorised Inventory information
4,060 pcs
4060 pcs On Request 1 On Request On Request 18+ On Request On Request

MBD770DWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Diode Type
Forward Current
Halogen Free
Operating Temperature
Power Dissipation (Max)
Reverse Voltage
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage

MBD770DWT1G Description

Short technical summary and product information.

The On Semiconductor MBD770DWT1G is a Schottky barrier diode designed for high-speed switching, circuit protection, and voltage clamping applications. It offers an extremely fast switching speed and a low forward voltage, which reduces conduction loss.

 

Key electrical specifications include a maximum forward current of 100 mA and a maximum reverse voltage of 70 V. The diode has a maximum power dissipation of 380 mW at 25°C. Its total capacitance is rated at 1 pF at 20V and 1MHz, with a reverse leakage of 200 nA at 35V.

 

This device operates over a temperature range of -55°C to 150°C. It is housed in a miniature SOT-363 surface mount package, making it suitable for portable applications where space is limited. The diode is AEC Qualified and PPAP Capable, with an NSV prefix for automotive and other applications requiring unique site and control change requirements.

 

The MBD770DWT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

MBD770DWT1G Quick Information

Product Type: Schottky Barrier Diode
Canonical Name: Schottky Barrier Diode
Subcategory: RF Diode

MBD770DWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MBD770DWT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MBD770DWT1G Features

  • Extremely fast switching speed.
  • Low forward voltage reduces loss.
  • 70V maximum reverse voltage.
  • 100mA maximum forward current.
  • Compact SOT-363 package.

MBD770DWT1G Applications

  • Suitable for high-speed switching circuits.
  • Used in circuit protection and voltage clamping.
  • Ideal for portable and space-constrained devices.
  • Applicable in RF signal processing applications.

MBD770DWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage for the MBD770DWT1G?

The maximum reverse voltage is 70V.

What is the maximum forward current of the MBD770DWT1G?

The maximum forward current is 100 mA.

What is the power dissipation of the MBD770DWT1G?

The maximum power dissipation is 380 mW.

What is the operating temperature range for this Schottky diode?

The operating temperature range is -55°C to 150°C.

What package type is the MBD770DWT1G supplied in?

The MBD770DWT1G is supplied in a SOT-363 package.

Is the MBD770DWT1G RoHS compliant?

Yes, the MBD770DWT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MBD770DWT1G?

The Moisture Sensitivity Level (MSL) is 1 (Unlimited).

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