| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | 551 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Access Time | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Memory Size | |
| Memory Type | |
| Military Grade | |
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| Storage Temperature | |
| Tape & Reel |
The Fujitsu Semiconductor MB85R1001PFTN-GE1 is a 1 Mbit Ferroelectric RAM (F-RAM) integrated circuit. This memory component offers a fast access time of 100 ns, making it suitable for applications requiring quick data read and write operations.
Designed for flexibility, the MB85R1001PFTN-GE1 operates within a supply voltage range of 3V to 3.6V. Its memory configuration is 128K x 8Bit, providing a total capacity of 1 Mbit.
This F-RAM is housed in a 48-pin TSOP package, designed for surface mounting. The operating temperature range is from -20 C to 85 C, allowing for use in various environmental conditions. The RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
This component is part of Fujitsu Semiconductor's F-RAM product line, known for non-volatility and high endurance.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 1 Mbit.
It is an F-RAM (Ferroelectric RAM) memory.
The access time is 100 ns.
The supply voltage range is from 3 V to 3.6 V.
The operating temperature range is from -20 C to 85 C.
It is in a TSOP package designed for surface mounting.