| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| Technology |
The MB81256-10 is a 262144 Bit NMOS DRAM manufactured by Fujitsu Semiconductor Limited. This component is designed for operation within a voltage range of 4.5V to 5.5V.
Key electrical characteristics include a 100ns access time and a 262144 bit density. The operating temperature range for this DRAM is from 0°C to a maximum of 70°C. It features 18 terminals and 1 circuit.
The MB81256-10 comes in a PZIP16 package. This DRAM is suitable for various electronic applications requiring reliable memory storage with specific voltage and temperature tolerances.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.19 | $7.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MB81256-10 has a minimum voltage rating of 4.5V and a maximum voltage rating of 5.5V.
The MB81256-10 operates from a minimum temperature of 0°C to a maximum of 70°C.
The MB81256-10 is a 262144 Bit NMOS DRAM.
The access time for the MB81256-10 is 100ns.
The MB81256-10 comes in a PZIP16 package.