| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,635 pcs
|
10635 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Current | |
| Driven Configuration | |
| Gate Type | |
| Input Type | |
| Logic Voltage | |
| Mounting Type | |
| Number of Drivers | |
| Operating Temperature | |
| Rise | |
| SVHC Present | |
| Supplier Device Package | |
| Voltage |
The MAX627ESA+ is a low-side gate driver IC manufactured by Analog Devices, formerly Maxim Integrated. This component is designed to drive MOSFETs efficiently in low-side configurations. It features a wide operating voltage range from 4.5V to 18V and can handle currents of 2A per channel.
The device offers independent channel control and accepts non-inverting inputs. It supports N-Channel and P-Channel MOSFETs, making it versatile for various power switching applications. The operating temperature range is specified from -40°C to 85°C (TA), ensuring reliable performance in diverse environmental conditions.
Packaged in an 8-SOIC surface mount configuration, the MAX627ESA+ is suitable for integration into compact electronic designs. Its specifications include logic voltages of 0.8V and 2.4V, with rise times of 25ns and 20ns, contributing to fast switching speeds in power circuits.
This gate driver is a component within the broader category of power management integrated circuits, specifically tailored for applications requiring precise control of power transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range is 4.5V to 18V.
The operating temperature range is -40°C to +85°C.
The MAX627ESA+ is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The MAX627ESA+ has two independent driver channels.
It can drive both N-channel and P-channel MOSFETs.
Typical rise time is 25ns and fall time is 20ns.