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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Noise Voltage (100 Hz, 1 mA) | |
| Offset Voltage | |
| Offset Voltage Drift (8C) | |
| Package / Case | |
| gain (Minimum @ IC= 1 mA) | |
| rbe |
The MAT02AH from Analog Devices is a matched dual NPN monolithic transistor optimized for very low noise, low drift, and low rBE. Its design utilizes a Silicon Nitride "Triple Passivation" process to stabilize critical device parameters across wide temperature ranges and elapsed time. The high current gain (hFE) is maintained over a broad spectrum of collector currents.
Key electrical features include a maximum offset voltage of 50 mV, a low noise voltage of 1.0 nV/√Hz at 100 Hz and 1 mA, and a high gain (hFE) of 500 minimum at 1 mA. It also exhibits excellent log conformance with rBE at 0.3 V and a low offset voltage drift of 0.1 mV/°C maximum.
This transistor is available in die form, making it suitable for custom hybrid circuit designs. It serves as an improved direct replacement for parts like the LM194/394.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum offset voltage is 50 mV.
The noise voltage is 1.0 nV/√Hz maximum at 100 Hz and 1 mA.
The minimum high gain (hFE) is 500 at 1 mA.
The offset voltage drift is 0.1 mV/°C maximum.
The MAT02AH is available in die form.