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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The MAT01AHZ from Analog Devices is a monolithic dual NPN transistor designed for high stability and critical parameter matching. It features a low VOS of 40 µV typical and a low TCVOS of 0.5 µV/°C maximum, making it suitable for precision applications.
This transistor offers a high minimum hFE of 500 and maintains excellent hFE linearity over a wide collector current range from 10 nA to 10 mA. The low noise voltage of 0.23 µV p-p from 0.1 Hz to 10 Hz further enhances its suitability for low-level signal processing.
With a breakdown voltage of 45V and a collector current rating of 300nA, the MAT01AHZ is ideal for applications such as low noise operational amplifier front ends, current mirrors, and low noise instrumentation amplifiers. It is housed in a TO-78-6 metal can package and supports through-hole mounting.
The silicon nitride triple passivation process ensures excellent stability over temperature and time. Its high gain at low collector currents makes it particularly useful in low power, low level input stages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 45V minimum.
The typical VBE match is 40 µV.
The maximum operating temperature is 150°C.
The MAT01AHZ is supplied in a TO-78-6 Metal Can package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.