| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MAT01AH is a high-performance monolithic dual NPN transistor manufactured by Analog Devices. Designed for precision applications, it features excellent matching characteristics, including low VOS (VBE match) of 40 µV typical and a low TCVOS of 0.5 µV/°C maximum. The transistor provides a high minimum hFE of 500 and maintains excellent linearity over a wide collector current range from 10 nA to 10 mA.
With a breakdown voltage of 45V and a power rating of 500mW, the MAT01AH is suitable for various demanding applications. Its low noise voltage of 0.23 µV p-p from 0.1 Hz to 10 Hz makes it ideal for low-level input stages and sensitive instrumentation amplifiers. The device operates over a wide temperature range of -55°C to 150°C.
Packaged in a TO-78-6 metal can, the MAT01AH is designed for through-hole mounting. Its silicon nitride triple passivation process ensures excellent stability of critical parameters over time and temperature, making it a reliable choice for applications such as weigh scales, low noise op-amp front ends, current mirrors, and voltage-controlled attenuators.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the MAT01AH transistor is 45V minimum.
The typical VBE match for the MAT01AH dual transistor is 40 µV.
The maximum operating temperature for the MAT01AH is 150°C.
The MAT01AH transistor is supplied in a TO-78-6 metal can package.
The MAT01AH transistor is designed for through-hole mounting.