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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MACOM MAPRST0912-50 is an NPN silicon microwave power transistor featuring a common base configuration and broadband Class C operation. It is designed for high-power applications in avionics, communications, radar, and industrial, scientific, and medical sectors.
This transistor delivers a minimum output power of 50W across a frequency range of 960 to 1215 MHz. Key electrical specifications include a collector-emitter breakdown voltage of 65V, a peak collector current of 5.3A, and a power gain typically ranging from 9.1dB to 10.25dB depending on frequency. It also features internal input and output impedance matching for optimized performance.
The device is housed in a hermetic metal/ceramic package suitable for chassis mounting. It operates with a junction temperature up to 200°C and has a thermal resistance of 0.80°C/W. The transistor is RoHS3 compliant and has an MSL rating of 1.
Ideal for demanding RF applications, the MAPRST0912-50 provides high efficiency and robust performance characteristics, including load mismatch stability and tolerance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MAPRST0912-50 transistor has a minimum output power of 50W.
The operating frequency range for the MAPRST0912-50 is 960-1215 MHz.
The collector-emitter breakdown voltage is 65V.
The typical power gain at 960 MHz is 10.25dB.
The MAPRST0912-50 transistor is chassis mounted.
The maximum junction temperature is 200°C.