MAPRST0912-50 The MACOM MAPRST0912-50 is an NPN silicon RF power transistor designed for high-power applications. It offers 50W output power across a 960-1215 MHz frequency range.
Mfr Part #:

MAPRST0912-50

Available from 1 distributors
Mfr Name: MACOM Technology Solutions
MACOM Technology Solutions
The MACOM MAPRST0912-50 is an NPN silicon RF power transistor designed for high-power applications. It offers 50W output power across a 960-1215 MHz frequency range.
Total Stock: 100 pcs
$ Price Range: $0.99

MAPRST0912-50 Available from 1 distributor

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MAPRST0912-50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Frequency Range
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MAPRST0912-50 Description

Short technical summary and product information.

The MACOM MAPRST0912-50 is an NPN silicon microwave power transistor featuring a common base configuration and broadband Class C operation. It is designed for high-power applications in avionics, communications, radar, and industrial, scientific, and medical sectors.

 

This transistor delivers a minimum output power of 50W across a frequency range of 960 to 1215 MHz. Key electrical specifications include a collector-emitter breakdown voltage of 65V, a peak collector current of 5.3A, and a power gain typically ranging from 9.1dB to 10.25dB depending on frequency. It also features internal input and output impedance matching for optimized performance.

 

The device is housed in a hermetic metal/ceramic package suitable for chassis mounting. It operates with a junction temperature up to 200°C and has a thermal resistance of 0.80°C/W. The transistor is RoHS3 compliant and has an MSL rating of 1.

 

Ideal for demanding RF applications, the MAPRST0912-50 provides high efficiency and robust performance characteristics, including load mismatch stability and tolerance.

MAPRST0912-50 Quick Information

Product Type: RF Power Transistor
Series: MAPRST0912-50
Canonical Name: NPN Silicon Microwave Power Transistor
Subcategory: RF Power Transistor

MAPRST0912-50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MAPRST0912-50 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MAPRST0912-50 Features

  • NPN silicon microwave power transistor.
  • 50W minimum output power.
  • 960-1215 MHz frequency range.
  • 65V collector-emitter breakdown voltage.
  • Hermetic metal/ceramic package.

MAPRST0912-50 Applications

  • Ideal for avionics applications.
  • Suitable for communications systems.
  • Used in radar systems.
  • Designed for ISM applications.

MAPRST0912-50 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the output power of the MAPRST0912-50 transistor?

The MAPRST0912-50 transistor has a minimum output power of 50W.

What is the operating frequency range for this RF power transistor?

The operating frequency range for the MAPRST0912-50 is 960-1215 MHz.

What is the collector-emitter breakdown voltage?

The collector-emitter breakdown voltage is 65V.

What is the typical power gain at 960 MHz?

The typical power gain at 960 MHz is 10.25dB.

How is the MAPRST0912-50 transistor mounted?

The MAPRST0912-50 transistor is chassis mounted.

What is the maximum junction temperature?

The maximum junction temperature is 200°C.

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