| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,004 pcs
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2004 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The MAAM26100 is a high-efficiency, two-stage GaAs MMIC power amplifier designed by M/A-COM. It operates across a frequency range of 2.0 to 6.5 GHz, making it suitable for various applications including UMTS, test equipment, electronic warfare, missile subsystems, and phased array radars.
Key electrical specifications include a typical saturated power of 30.5 dBm, a typical gain of 19 dB, and a typical power added efficiency of 30%. The amplifier features an on-chip bias network and DC-decoupled RF input and output, simplifying external circuitry requirements in 50-ohm systems. It is fabricated using a mature 0.5-micron gate length GaAs process with full passivation for enhanced performance reliability.
The device is supplied as a die. Absolute maximum ratings include a VDD of +9 V, VG1/VG2 between -2.5 V and -0.8 V, and VGG between -6 V and -3 V. The maximum channel temperature is 150°C, and storage temperature ranges from -65°C to +150°C.
The MAAM26100 operates from 2.0 to 6.5 GHz.
The typical saturated power is 30.5 dBm.
The typical gain is 19 dB.
The typical power added efficiency is 30%.
The absolute maximum VDD is +9 V, VG1/VG2 is -2.5 V to -0.8 V, and VGG is -6 V to -3 V.
The maximum channel temperature is 150°C.