MA4AGSW3

The MA4AGSW3 is an Aluminum-Gallium-Arsenide (AlGaAs) single pole, triple throw (SP3T) PIN diode switch designed for high-frequency applications. It operates across an ultra-broad bandwidth from 50 MHz to 50 GHz, with a functional bandwidth extending to 70 GHz.

Key electrical characteristics include a typical insertion loss of 0.3 dB and an isolation of 31 dB at 50 GHz. The switch consumes low current, with -10 mA for the low loss state and +10 mA for the isolation state. It features MACOM's unique AlGaAs hetero-junction anode technology, providing reduced insertion loss compared to conventional GaAs processes.

Fabricated on an OMCVD epitaxial wafer, this device exhibits high uniformity and extremely low parasitics. The diodes offer low series resistance, low capacitance, and fast switching speeds. The switch is fully passivated with silicon nitride and includes a polymer scratch protection layer for enhanced durability during handling and assembly. Off-chip bias circuitry is required.

The MA4AGSW3 is ideal for fast response, high-frequency, multi-throw switch designs due to the high electron mobility of AlGaAs and the low capacitance of the PIN diodes. Applications include radar systems, radiometers, test equipment, and other multi-assembly components in aerospace and defense sectors.